Q. A modern power semiconductor device IGBT combines the characteristics of

A
BJT and MOSFET
B
FCT and GTO
C
SCR and MOSFET
D
SCR and BJT
Solution:

IGBT incorporates the advantages of both BJT and MOSFET. BJT has better ON state performance while the switching performance is poor. A MOSFET has the advantages of higher commutation speed and better switching performance. Thus IGBT possess both low conduction loss and low switching losses.

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