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A silicon controlled rectifier has 4 semiconductor layers. Alternating PN junctions, ie, PNPN or NPNP layers. It has 3 junctions: Anode, Cathode and Gate.
The figure explains it in detail.

LEDs are semiconductor devices. These devices convert electrical energy to light energy. It conducts only in forward biased and blocks the flow of current in reverse bias condition.

LED have 2 terminals. The negative terminal is the cathode and positive terminal is the anode. Cathode lead is shorter than the anode lead.

Main P-type dopant Gallium (Atomic Number
= 31) and N-type dopant Arsenide (Atomic Number=33). GaAs has a crystalline structure. It has a wavelength is 850 nm- 940 nm. It emits infrared.

Usually a three phase distribution transformer will be Delta- Star connected. It will be a step down transformer which converts the voltage level from 11 kV to 415 V range. The diagram shows the connection and the Star output terminals take a neutral line also to provide the supply for the single phase consumers.

Active components are those that supply energy to the circuit. Example: Generators, MOSFET and diodes.
Passive components are those that receive energy. Example: Resistor, Inductor, Capacitor.

On drawing the graph of power vs Current, the graph is almost linear for LEDs. This makes it more suitable for analog transmissions.

LED is similar to a PN junction diode. It conducts only when the junction is forward biased.

The full form of ELED is ‘Edge Emitting Light-emitting Diodes’. On doping, the layer with Zinc reduces the minority carrier lifetime. This will improve the modulation bandwidth.
Thus, the active layer is made up of Zinc.

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